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Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks

Bibliographic reference Rauly, E. ; Iniguez, B. ; Flandre, Denis ; Raynaud, C.. Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks.ESSDERC 2000. Proceedings of the 30th European Solid-State Device Research Conference (Cork (Ireland), du 11/09/2000 au 13/09/2000). In: Lane, W.A.; Crean, G.M.; McCabe, F.A.; Grunbacher, H.;, ESSDERC 2000. Proceedings of the 30th European Solid-State DeviceResearch Conference, Frontier group2000, p.540-543
Permanent URL http://hdl.handle.net/2078.1/68113