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Optical crosstalk reduction using a HR-Si substrate with trap-rich passivation layer

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Roda Neve, Cesar [UCL] Lederer, Dimitri [UCL] Raskin, Jean-Pierre [UCL]

The efficiency of a coplanar waveguide photo- induced Radio Frequency switch on a High Resistivity Silicon substrate is presented. Experimental results from 40 MHz to 40 GHz demonstrate the important reduction of transmission line losses and optical crosstalk obtained by introducing a trap-rich passivation layer (crystallized amorphous silicon) at the interface between the high resistivity silicon substrate and the field oxide.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2007
Conference "EuMC 2007. 37th European Microwave Conference", Munich, Germany (9-12 October 2007)
Peer reviewed yes
Host document "EuMC 2007 Proceedings. 37th European Microwave Conference"- p. 592-595 (ISBN : 978-2-87487-001-9)
Publisher IEEE
Publication status Publié
Affiliation UCL
Links
Bibliographic reference Roda Neve, Cesar ; Lederer, Dimitri ; Raskin, Jean-Pierre. Optical crosstalk reduction using a HR-Si substrate with trap-rich passivation layer.EuMC 2007. 37th European Microwave Conference (Munich, Germany, 9-12 October 2007). In: EuMC 2007 Proceedings. 37th European Microwave Conference, IEEE2007, p. 592-595
Permanent URL http://hdl.handle.net/2078.1/67812