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High temperature DC and RF behavior of partially depleted SOI versus deep n-well protected bulk MOSFETs

Bibliographic reference Emam, Mostafa ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre. High temperature DC and RF behavior of partially depleted SOI versus deep n-well protected bulk MOSFETs.2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF09) (San Diego, CA, USA, 19-21 January 2009). In: Chappell, W.J.;, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF09), IEEE2009, p.4 pp.
Permanent URL http://hdl.handle.net/2078.1/67681