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Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires

Bibliographic reference Passi, Vikram ; Ravaux, F. ; Dubois, Emmanuel ; Raskin, Jean-Pierre. Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires.23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010) (Wanchai, Hong Kong, China, 24-28 January 2010). In: 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), IEEE2010, p. 464-467
Permanent URL http://hdl.handle.net/2078.1/67476