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New RF Intrinsic Parameters Extraction Procedure for Advanced MOS Transistors

Bibliographic reference Tinoco, J.C. ; Martinez-Lopez, A.G. ; Emam, Mostafa ; Raskin, Jean-Pierre. New RF Intrinsic Parameters Extraction Procedure for Advanced MOS Transistors.2010 23rd IEEE ICMTS International Conference on Microelectronic Test Structures (ICMTS 2010) (Hiroshima, Japan, 22-25 March 2010). In: 2010 23rd IEEE ICMTS International Conference on Microelectronic Test Structures (ICMTS 2010), IEEE2010, p. 86-89
Permanent URL http://hdl.handle.net/2078.1/67421