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3D Simulation of Triple-Gate MOSFETs

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Conde, J. Cerdeira, A. Pavanello, M. Kilchytska, Valeriya [UCL] Flandre, Denis [UCL]

In this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation of the proposed structure was made for a FinFET arrays with fixed channel length and different fin widths, obtaining a very good coincidence between experimental and simulated characteristics.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2010
Language Anglais
Conference "Proceedings of MIEL 2010, the 27th International Conference on Microelectronics Proceedings", Nis/Serbia (du 16/05/2010 au 19/05/2010)
Peer reviewed yes
Host document "Proceedings of the 27th International Conference on Microelectronics (MIEL 2010)"- 409-411 (ISBN : 978-1-4244-7200-0)
Publisher IEEE
Affiliations CINVESTAV-IPN, Mexico City - Dept. de Ing. Electr.
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
Bibliographic reference Conde, J. ; Cerdeira, A. ; Pavanello, M. ; Kilchytska, Valeriya ; Flandre, Denis. 3D Simulation of Triple-Gate MOSFETs.Proceedings of MIEL 2010, the 27th International Conference on Microelectronics Proceedings (Nis/Serbia, du 16/05/2010 au 19/05/2010). In: Proceedings of the 27th International Conference on Microelectronics (MIEL 2010), IEEE2010, p.409-411
Permanent URL http://hdl.handle.net/2078.1/67395