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Robustness-aware sleep transistor engineering for power-gated nanometer subthreshold circuits

Bibliographic reference Bol, David ; Legat, Jean-Didier ; Hocquet, Cédric ; Flandre, Denis. Robustness-aware sleep transistor engineering for power-gated nanometer subthreshold circuits.2010 IEEE International Symposium on Circuits and Systems. ISCAS 2010 (Paris, France, du 05/05/2010 au 02/06/2010). In: Proceedings of the IEEE International Symposium on Circuits and Systems. ISCAS 2010, IEEE2010, p.1484-1487
Permanent URL http://hdl.handle.net/2078.1/67357