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Analysis of interface properties in MOS transistors by means of `charge pumping' measurements

Bibliographic reference Declercq, Michel ; Jespers, Paul. Analysis of interface properties in MOS transistors by means of `charge pumping' measurements. In: Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications, Vol. 9, no. 8, p. 244-253 (1974)
Permanent URL http://hdl.handle.net/2078.1/66741