White, M.H.
Van de Wiele, F.
Lambot, J.-P.
Presents accurate device models (1-3 percent) to describe the /b I //sub D/-/b V//sub D/ electrical characteristics of surface-channel PMOS transistors in strong inversion, and ion-implanted depletion-mode buried-channel PMOS transistors. The primary emphasis is an accurate description of the transverse carrier mobility with distance and normal electrical field in long-channel structures. The influence of substrate bias on carrier mobility in the surface-channel device is modeled theoretically and verified by experiment. The carrier mobility in the buried-channel devices is constant as determined experimentally with gated-diode /b C/-/b V/ and conductance measurements. The modeling parameters are determined at /b V//sub D/=0 with an automated data-acquisition microprocessor-controlled system. The models are analyzed with a least squares estimation criterion and a high degree of internal consistency is apparent from the statistical significance of the results.
Bibliographic reference |
White, M.H. ; Van de Wiele, F. ; Lambot, J.-P.. High-accuracy MOS models for computer-aided design. In: IEEE Transactions on Electron Devices, Vol. ED-27, no. 5, p. 899-906 (1980) |
Permanent URL |
http://hdl.handle.net/2078.1/66531 |