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Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

Bibliographic reference Dornberger, E ; Graf, D ; Suhren, M ; Lambert, U ; Wagner, P ; et. al. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals.2nd International Workshop on Modelling in Crystal Growth (DURBUY(Belgium), Oct 13-16, 1996). In: Journal of Crystal Growth, Vol. 180, no. 3-4, p. 343-352 (1997)
Permanent URL http://hdl.handle.net/2078.1/62685