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Fabrication of twin nano silicon wires based on arsenic dopant effect

Bibliographic reference Tang, Xiaohui ; Baie, X. ; Colinge, JP.. Fabrication of twin nano silicon wires based on arsenic dopant effect.1997 International Conference on Solid State Devices and Materials (SSDM 97) (HAMAMATSU(Japan), du 16/09/1997 au 19/09/1997). In: Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres, Vol. 37, no. 3B, p. 1591-1593 (1998)
Permanent URL http://hdl.handle.net/2078.1/62507