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0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Bibliographic reference Vanmackelberg, M ; Raynaud, C. ; Faynot, O. ; Pelloie, JL ; Tabone, C ; et. al. 0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters.1st European Workshop on Ultimate Integration of Silicon (ULIS 2000) (Grenoble (France)). In: Solid-State Electronics, Vol. 46, no. 3, p. 379-386 (2002)In: Proceedings of the 1st European Workshop on Ultimate Integration of Silicon (ULIS 2000), Pergamon-elsevier Science Ltd : Oxford2002
Permanent URL http://hdl.handle.net/2078.1/61803