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Auger Si LVV lineshape analysis of porous p-type silicon electroplated with Fe-Co alloys

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Hamadache, F. Bertrand, Patrick [UCL]

Different electrochemically produced porous p-type silicon layers filled with Fe-Co alloys are investigated through AES depth profiling. In this study, we analysed the lineshape changes of the Auger Si LVV transition with the sputter depth and alloy composition. Application of factor analysis to this line, together with Fe and Co LVV transitions, enabled us to identify the dominant chemical state of Si atoms at the pore walls. The structure of the Si LVV lineshape of the metallized porous p-type silicon compared with that of oxidized porous p-type silicon suggests that Si atoms are slightly bonded to oxygen. Room-temperature formation of interfacial Si-Fe-Co compounds is likely to occur upon pore filling with the alloy. This is supported by the change of this lineshape with Fe-Co composition and by the appearance of plasmon loss peaks in the Fe and Co LVV lineshapes. Copyright (C) 2002 John Wiley Sons, Ltd.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2002
Language Anglais
Journal information "Surface and Interface Analysis" - Vol. 34, no. 1, p. 239-243 (2002)
Peer reviewed yes
Publisher John Wiley & Sons Ltd (W Sussex)
issn 0142-2421
e-issn 1096-9918
Publication status Publié
Affiliation UCL - Autre
Keywords Aes Depth Profiling ; Factor Analysis ; Porous Silicon ; Anodic Etching ; Iron-cobalt Alloys ; Electrodeposition
Links
  1. Dorigoni, Thin Solid Films, 276, 244 (1996)
  2. Pavesti, J. Appl. Phys., 75, 1118 (1994)
  3. Derrien, Phys. Rev. B, 36, 6681 (1987)
  4. Gallego, Phys. Rev. B, 46, 13 (1992)
  5. Chemilli, Appl. Surf. Sci., 68, 173 (1993)
  6. Plusnin, Appl. Suf. Sci., 166, 125 (2000)
  7. Zhu, J. Appl. Phys., 60, 2629 (1989)
  8. Gallego, Surf. Sci., 251/252, 59 (1991)
  9. In Properties of Porous Silicon. (ed.). IEE: London, 1997; 343-348, 356-363.
  10. Hamadache, J. Mater. Res., 17 (2002)
  11. SpecView Spectrometer Control System V3.3. Physical Electronics: Eden Prairie, MN, 1997.
  12. MultiPack Software Manual V5.0, Part No.638366 Rev.A. Physical Electronics: Eden Prairie, MN, 1997.
  13. Sch�pke, Surf. Interface Anal., 25, 5 (1997)
  14. Hofmann, Surf. Interface Anal., 14, 59 (1989)
  15. Gaarenstroom, Appl. of Surf. Sci., 7, 7 (1981)
  16. Handbook of Auger Electron Spectroscopy (2nd edn). Physical Electronics: Eden Prairie, MN, 1976.
Bibliographic reference Hamadache, F. ; Bertrand, Patrick. Auger Si LVV lineshape analysis of porous p-type silicon electroplated with Fe-Co alloys. In: Surface and Interface Analysis, Vol. 34, no. 1, p. 239-243 (2002)
Permanent URL http://hdl.handle.net/2078.1/61718