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X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Bibliographic reference Vitchev, RG ; Pireaux, Jean-Jacques ; Conard, T. ; Bender, H. ; Wolstenholme, J ; et. al. X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface.8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG) (Berlin(Germany), Jun 23-26, 2003). In: Applied Surface Science, Vol. 235, no. 1-2, p. 21-25 (2004)
Permanent URL http://hdl.handle.net/2078.1/61401