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Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

Bibliographic reference Rudenko, Tamara ; Collaert, Nadine ; De Gendt, S. ; Kilchytska, Valeriya ; Jurczak, Malgorzata ; et. al. Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode.In: Microelectronic Engineering, Vol. 80, p. 386-389 (17 June 2005)
Permanent URL http://hdl.handle.net/2078.1/60892