User menu

Effect of interfacial SiO2 thickness for low temperature O-2 plasma activated wafer bonding

Bibliographic reference Olbrechts, Benoit ; Zhang, XX ; Bertholet, Y. ; Pardoen, Thomas ; Raskin, Jean-Pierre. Effect of interfacial SiO2 thickness for low temperature O-2 plasma activated wafer bonding. In: Microsystem Technologies : micro and nanosystems - information storage and processing systems, Vol. 12, no. 5, p. 383-390 (2006)
Permanent URL
  1. Amirfeiz P, Bengtsson S, Bergh M, Zanghellini E, Börjesson L (2000) Formation of silicon structures by plasma activated wafer bonding. J Electrochem Soc 147:2693–2698
  2. Banerjee K, Souri SJ, Kapur P, Saraswat KC (2001) 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration. Proc IEEE 89:602–633
  3. Bertholet Y, Iker F, Raskin JP and Pardoen T (2004) Steady-state measurement and modeling of wafer bonding failure resistance. Sens Actuators A 110:157–163
  4. Bruel M (1995) Silicon on insulator material technology. Electron Lett 31:1201–1202
  5. Choi K, Ghosh S, Lim J, Lee CM (2003) Removal efficiency of organic contaminants on Si wafer by dry cleaning using UV/O3 and ECR plasma. Appl Surf Sci 206:355–364
  6. Dessein K, Anil Kumar PS, Németh S, Delaey L, Borghs G and De Boeck J (2001) The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures. J Cryst Growth 227–228:906–910
  7. Goustouridis D, Minoglou K, Kolliopoulou S, Chatzandroulis S, Morfouli P, Normand P, Tsoukalas D (2004) Low temperature wafer bonding for thin film layer transfer. Sens Actuators A 110:401–406
  8. Hahn PO, Lampet I, Schnegg A (1988) In: Pantelides ST, Lucovsky G (eds) SiO2 and its interfaces: symposium, materials research society, 30 November–5 December 1987, Pittsburgh, pp 247–252
  9. Henttinen K, Suni I, Lau SS (2000) Mechanically induced Si layer transfer in hydrogen-implanted Si wafers. Appl Phys Lett 76:2370–2372
  10. Hurley RE and Gamble HS (2003) Thin film sputtered silicon for silicon wafer bonding applications. Vacuum 70(2–3):131–140
  11. Kräuter G, Schumacher A, Gösele U (1998) Low temperature silicon direct bonding for application in micromechanics: bonding energies for different combinations of oxides. Sens Actuators A70:271–275
  12. Lai SI, Lin HY, Hu CT (2004) Effect of surface treatment on wafer direct bonding process. Mater Chem Phys 83:265–272
  13. Pasquariello D, Lindeberg M, Hedlund C, Hojrt K (2000) Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding. Sens Actuators 82:239–244
  14. Pasquariello D, Hedlund C and Hjort K (2000) Oxidation and induced damage in oxygen plasma in situ wafer bonding. J Electrochem Soc 147(7):2699–2703
  15. Suni T, Henttinen K, Suni I, Mäkinen J (2002) Effects of plasma activation on hydrophilic bonding of Si and SiO2. J Electrochem Soc 149:G348–G351
  16. Tong G, Cha QY, Gafiteanu R, Gösele U (1994) Low temperature wafer direct bonding. J Microelectromech Syst 3:29–35
  17. Tong QY, Kim WJ, Lee TH, Gösele U (1998) Low vacuum wafer bonding, Electrochem. Solid State Lett 1(1):52–53
  18. Wei BY, Cher MT, Su SD, Sharon MLN (2004) Influence of applied load on vacuum wafer bonding at low temperature. Sens Actuators A 115:67–72
  19. Williams JS, Short KT, Petravic M, Svensson BG (1997) Oxidation of silicon by low energy oxygen ions. Nucl Instrum Methods Phys Res B 121:24–29
  20. Zhang X, Raskin JP (2004) Investigation on the uniformity of surface energy is silicon direct bonding technique. J Electrochem Soc 151(9):G568–G573
  21. Zhang X, Raskin JP (2004) Low-temperature wafer bonding optimal O2 plasma surface pretreatment time. Electrochem Solid State Lett 7:G172–G174
  22. Zhang X, Raskin JP (2005) Low temperature wafer bonding: a study of void formation and influence on bonding strength. J Microelectromech Syst (in press)