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Effect of interfacial SiO2 thickness for low temperature O-2 plasma activated wafer bonding

Bibliographic reference Olbrechts, Benoit ; Zhang, XX ; Bertholet, Y. ; Pardoen, Thomas ; Raskin, Jean-Pierre. Effect of interfacial SiO2 thickness for low temperature O-2 plasma activated wafer bonding. In: Microsystem Technologies : micro and nanosystems - information storage and processing systems, Vol. 12, no. 5, p. 383-390 (2006)
Permanent URL http://hdl.handle.net/2078.1/60032
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