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Electrical characteristics and simulations of self-switching-diodes in SOI technology

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Farhi, G. Saracco, E. Beerens, J. Morris, D. Charlebois, S. A. Raskin, Jean-Pierre [UCL]

Self-switching devices (SSDs) are new nano-scale field effect active components. In the present work, these devices are made in siliconon-insulator (SOI) technology and operate at room temperature. We investigate their current-voltage (I-V) characteristics which show a diode-like behaviour due to electrostatic effects. Thermal activation measurements are presented and discussed. We also present simulations to gain better understanding of device physics and also to optimize the critical parameters of the fabrication process. (c) 2007 Elsevier Ltd. All rights reserved.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2007
Language Anglais
Conference "3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07)", Leuven(Belgium) (Jan 24-26, 2007)
Journal information "Solid-State Electronics" - Vol. 51, no. 9, p. 1245-1249 (2007)
Peer reviewed yes
issn 0038-1101
e-issn 1879-2405
Publisher Pergamon-elsevier Science Ltd (Oxford)
Publication status Publié
Affiliation UCL - Autre
Keywords Self-switching-diodes ; Soi Wafers ; I-v Characteristics ; Medici Simulations ; Novel Devices
Links
Bibliographic reference Farhi, G. ; Saracco, E. ; Beerens, J. ; Morris, D. ; Charlebois, S. A. ; et. al. Electrical characteristics and simulations of self-switching-diodes in SOI technology.3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07) (Leuven(Belgium), Jan 24-26, 2007). In: Solid-State Electronics, Vol. 51, no. 9, p. 1245-1249 (2007)
Permanent URL http://hdl.handle.net/2078.1/59528