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Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

Bibliographic reference Larrieu, Guilhem ; Dubois, Emmanuel ; Yarekha, Dmytro ; Breil, Nicolas ; Reckinger, Nicolas ; et. al. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance.Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting (Strasbourg (France), du 26/05/2008 au 30/05/2008). In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154, p. 159-162 (2008)
Permanent URL http://hdl.handle.net/2078.1/59060