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TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

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Ratajczak, J. [Institute of Electron Technology, warsaw] Laszcz, A. [Institute of Electron Technology, Warsaw] Czerwinski, A. [Institute of Electron Technology, Warsaw] Katcki, J. [Institute of Electron Technology, Warsaw] Tang, Xiaohui [UCL] Reckinger, Nicolas [UCL] Dubois, Emmanuel [IEMN/ISEN, Villeneuve d'Ascq]

The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2009
Language Anglais
Conference "3rd National Conference on Nanotechnology", Warsaw(Poland) (du 22/06/2009 au 26/06/2009)
Journal information "Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics" - Vol. 116, p. S89-S91 (2009)
Peer reviewed yes
issn 0587-4246
Host document
Publisher Polish Acad Sciences Inst Physics (Warsaw)
Affiliation UCL - FSA/ELEC - Département d'électricité
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Bibliographic reference Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Katcki, J. ; Tang, Xiaohui ; et. al. TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs.3rd National Conference on Nanotechnology (Warsaw(Poland), du 22/06/2009 au 26/06/2009). In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, Vol. 116, p. S89-S91 (2009)
Permanent URL http://hdl.handle.net/2078.1/58645