User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

  1. Baglin, Appl. Phys. Lett., 36, 594 (1980)
  2. Baglin, J. Appl. Phys., 52, 2841 (1981)
  3. Bentini, J. Appl. Phys., 57, 270 (1985)
  4. Breil, Appl. Phys. Lett., 91, 232112 (2007)
  5. Dubois, J. Appl. Phys., 96, 729 (2004)
  6. Frangis, Appl. Surf. Sci., 102, 164 (1996)
  7. Janega, Appl. Phys. Lett., 55, 1415 (1989)
  8. Knapp, Appl. Phys. Lett., 48, 466 (1986)
  9. Liew, Thin Solid Films, 504, 81 (2006)
  10. Luo, J. Appl. Phys., 82, 3808 (1997)
  11. Reckinger, J. Appl. Phys., 104, 103523 (2008)
  12. Rèvèsz, J. Appl. Phys., 54, 1860 (1983)
  13. Tan, IEEE Electron Device Lett., 27, 93 (2006)
  14. Tang, Sol. St. Electr., 47, 2105 (2003)
  15. Tu, Appl. Phys. Lett., 38, 626 (1981)
  16. Thompson, J. Appl. Phys., 58, 705 (1985)
  17. Wu, Appl. Surf. Sci., 102, 184 (1996)
  18. Yiew, Thin Solid Films, 504, 91 (2006)
Bibliographic reference Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Katcki, J. ; Phillipp, F. ; et. al. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.13th International Conference on Electron Microscopy (Zakopane(Poland), Jun 08-11, 2008). In: Journal of Microscopy, Vol. 237, no. 3, p. 379-383 (2010)
Permanent URL http://hdl.handle.net/2078.1/58635