User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Temperature-dependence of Excess Carrier Density and Thermopower in Tin-doped Bismuth - Pseudo-parabolic Model

Bibliographic reference Heremans, J. ; Hansen, OP.. Temperature-dependence of Excess Carrier Density and Thermopower in Tin-doped Bismuth - Pseudo-parabolic Model. In: Journal of Physics C: Solid State Physics, Vol. 16, no. 23, p. 4623-4636 (1983)
Permanent URL http://hdl.handle.net/2078.1/56568