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Measurement and Simulation of Floating Substrate Effects On the Intrinsic Gate Capacitance Characteristics of Soi N-mosfets

Bibliographic reference Flandre, Denis. Measurement and Simulation of Floating Substrate Effects On the Intrinsic Gate Capacitance Characteristics of Soi N-mosfets. In: Electronics Letters, Vol. 28, no. 10, p. 967-969 (1992)
Permanent URL http://hdl.handle.net/2078.1/50421