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Demonstration of the Potential of Accumulation-mode Mos-transistors On Soi Substrates for High-temperature Operation (150-300-degrees-c)

Bibliographic reference Flandre, Denis ; Terao, A. ; Francis, P. ; Gentinne, B. ; Colinge, JP.. Demonstration of the Potential of Accumulation-mode Mos-transistors On Soi Substrates for High-temperature Operation (150-300-degrees-c). In: IEEE Electron Device Letters, Vol. 14, no. 1, p. 10-12 (1993)
Permanent URL http://hdl.handle.net/2078.1/49956