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Double Snapback in Soi Nmosfets and its Application for Soi Esd Protection

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Verhaege, K. Groeseneken, G. Colinge, JP. Maes, HE.

This paper reports on a newly discovered phenomenon of double snapback observed in SOI nMOSFET's. An extensive experimental analysis of this phenomenon and a tentative model are presented. It will be shown that based on this double-snapback phenomenon, perspectives are offered towards a new electrostatic discharge (ESD) protection concept for SOI technologies.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1993
Language Anglais
Journal information "IEEE Electron Device Letters" - Vol. 14, no. 7, p. 326-328 (1993)
Peer reviewed yes
Publisher Ieee-inst Electrical Electronics Engineers Inc (New York)
issn 0741-3106
e-issn 1558-0563
Publication status Publié
Affiliation UCL
Links
Bibliographic reference Verhaege, K. ; Groeseneken, G. ; Colinge, JP. ; Maes, HE.. Double Snapback in Soi Nmosfets and its Application for Soi Esd Protection. In: IEEE Electron Device Letters, Vol. 14, no. 7, p. 326-328 (1993)
Permanent URL http://hdl.handle.net/2078.1/49631