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Analysis of Floating Substrate Effects On the Intrinsic Gate Capacitance of Soi Mosfets Using 2-dimensional Device Simulation

Bibliographic reference Flandre, Denis. Analysis of Floating Substrate Effects On the Intrinsic Gate Capacitance of Soi Mosfets Using 2-dimensional Device Simulation. In: IEEE Transactions on Electron Devices, Vol. 40, no. 10, p. 1789-1796 (1993)
Permanent URL http://hdl.handle.net/2078.1/49499