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Charge-sheet Modeling of Mos I-v Fundamental Nonlinearities in Mosfet-c Continuous-time Filters

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Flandre, Denis [UCL] Jespers, Paul [UCL]

The linearity of the two-MOSFET and four-MOSFET integrators used in MOSFET-C continuous-time filter implementations is compared using the charge-sheet model. The results question the widely-accepted superiority of the four-MOSFET structure in terms of higher attenuation of odd-order harmonic distortions.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1995
Language Anglais
Journal information "Electronics Letters" - Vol. 31, no. 17, p. 1419-1420 (1995)
Peer reviewed yes
Publisher Iee-inst Elec Eng (Herts)
issn 0013-5194
e-issn 1350-911X
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords MOSFETS ; INTEGRATING CIRCUITS ; SEMICONDUCTOR DEVICE MODELS
Links
Bibliographic reference Flandre, Denis ; Jespers, Paul. Charge-sheet Modeling of Mos I-v Fundamental Nonlinearities in Mosfet-c Continuous-time Filters. In: Electronics Letters, Vol. 31, no. 17, p. 1419-1420 (1995)
Permanent URL http://hdl.handle.net/2078.1/47845