Two-dimensional confinement effects in gate-all-around (GAA) MOSFETS

Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrodinger equations in a self-consistent manner provides the electron wave functions and the energy levels within the device channel. The variation of these energy levels, as well as the electron concentration profile, have been computed as a function of gate voltage. Transconductance fluctuations are observed as new energy levels become populated. (C) 1998 Elsevier Science Ltd. All rights reserved.