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A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's

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Iniguez, B. [UCL] Flandre, Denis [UCL] Gentinne, B. [UCL] Dessard, V. [UCL]

In this paper, we present a unified accumulation-mode (AM) SOI MOSFET model for circuit simulation. The model is valid in all the regimes of normal operation and includes explicit expressions of the drain current and total charges which have an infinite order of continuity; therefore, smooth transitions are assured. Short channel effects have also been accounted for, We have finally proved that our model accurately fits the transistor characteristics for effective channel lengths down to 0.7-mu m.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1999
Language Anglais
Journal information "IEEE Transactions on Electron Devices" - Vol. 46, no. 12, p. 2295-2303 (1999)
Peer reviewed yes
Publisher Ieee-inst Electrical Electronics Engineers Inc (New York)
issn 0018-9383
e-issn 1557-9646
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords capacitance measurements
Links
Bibliographic reference Iniguez, B. ; Flandre, Denis ; Gentinne, B. ; Dessard, V.. A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's. In: IEEE Transactions on Electron Devices, Vol. 46, no. 12, p. 2295-2303 (1999)
Permanent URL http://hdl.handle.net/2078.1/44022