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Electrodeposition of Fe-Co alloys into nanoporous p-type silicon: Influence of the electrolyte composition

Bibliographic reference Hamadache, F. ; Duvail, JL ; Scheuren, V ; Piraux, Luc ; Poleunis, Claude ; et. al. Electrodeposition of Fe-Co alloys into nanoporous p-type silicon: Influence of the electrolyte composition. In: Journal of Materials Research, Vol. 17, no. 5, p. 1074-1084 (2002)
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  1. Hérino Roland, Nanocomposite materials from porous silicon, 10.1016/s0921-5107(99)00269-x
  2. Renaux C, Scheuren V, Flandre D, New experiments on the electrodeposition of iron in porous silicon, 10.1016/s0026-2714(99)00331-5
  3. Li Xin Jian, Zhu De Liang, Chen Qian Wang, Zhang Yu Heng, Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching, 10.1063/1.123080
  4. Ronkel F, Schultze J.W, Arens-Fischer R, Electrical contact to porous silicon by electrodeposition of iron, 10.1016/0040-6090(95)08045-7
  5. Aylett B.J, Harding I.S, Earwaker L.G, Forcey K, Giaddui T, Metallisation of porous silicon by chemical vapour infiltration and deposition, 10.1016/0040-6090(95)08065-1
  6. Jeske M., Schultze J.W., Thönissen M., Münder H., Electrodeposition of metals into porous silicon, 10.1016/0040-6090(94)05605-d
  7. Ito Toshimichi, Yoneda Toshiyuki, Furuta Keisuke, Hatta Akimitsu, Hiraki Akio, Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating, 10.1143/jjap.34.l649
  8. Steiner Peter, Kozlowski Frank, Lang Walter, Electroluminescence from porous silicon after metal deposition into the pores, 10.1016/0040-6090(94)05602-a
  9. Izidinov, Russ. J. Appl. Chem., 68, 519 (1995)
  10. Gusev Sergey A., Korotkova Natalia A., Rozenstein Dmitry B., Fraerman Andrey A., Ferromagnetic filaments fabrication in porous Si matrix (invited), 10.1063/1.358163
  11. Anderson D.G., Anwar N., Aylett B.J., Earwaker L.G., Nasir M.I., Farr J.P.G., Stiebahl K., Keen J.M., Chemical vapour deposition of metals and metal silicides on the internal surfaces of porous silicon, 10.1016/0022-328x(92)83450-v
  12. Ito T., Yamama A., Hiraki A., Satou M., Silicidation of porous silicon and its application for the fabrication of a buried metal layer, 10.1016/0169-4332(89)90075-5
  13. Tsao S. S., Blewer R. S., Tsao J. Y., Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon, 10.1063/1.97601
  14. Herino R., Nickel Plating on Porous Silicon, 10.1149/1.2113612
  15. Tsuya N., Saito Y., Nakamura H., Hayano S., Furugohri A., Ohta K., Wakui Y., Tokushima T., A perpendicular magnetic recording medium by alumite, 10.1016/0304-8853(86)90975-3
  16. Whitney T. M., Searson P. C., Jiang J. S., Chien C. L., Fabrication and Magnetic Properties of Arrays of Metallic Nanowires, 10.1126/science.261.5126.1316
  17. Piraux L., George J. M., Despres J. F., Leroy C., Ferain E., Legras R., Ounadjela K., Fert A., Giant magnetoresistance in magnetic multilayered nanowires, 10.1063/1.112672
  18. Zech N., Podlaha E. J., Landolt D., 10.1023/a:1003416328942
  19. Ebothé Jean, Vilain Stéphane, Surface roughness and morphology of Co-(Fe and Ni) binary alloy electrodeposits studied by atomic force microscopy, 10.1088/0022-3727/32/18/305
  20. Kakuno E. M., Structure, Composition, and Morphology of Electrodeposited Co[sub x]Fe[sub 1−x] Alloys, 10.1149/1.1837987
  21. Kakuno E M, Silva R C da, Mattoso N, Schreiner W H, Mosca D H, Teixeira S R, Giant magnetoresistance in electrodeposited Co87Fe13/Cu compositionally modulated alloys, 10.1088/0022-3727/32/11/305
  22. Bohne W., Reinsperger G.-U., Röhrich J., Röschert G., Selle B., Composition analysis of Co doped FeSix films by combining standard and heavy-ion RBS, 10.1016/s0168-583x(97)00697-6
  23. Hong S., Pirri C., Wetzel P., Gewinner G., Synthesis of epitaxial ternaryCo1−xFexSi2silicides with CsCl- andCaF2-type cubic structures on Si(111) by codeposition techniques, 10.1103/physrevb.55.13040
  24. Teichert S., Kilper R., Franke T., Erben J., Häussler P., Henrion W., Lange H., Panknin D., Electrical and optical properties of thin Fe1−xCoxSi2 films, 10.1016/0169-4332(95)00094-1
  25. Feng Z C, Wee A T S, Tan K L, Surface and optical analyses of porous silicon membranes, 10.1088/0022-3727/27/9/024
  26. Mizuno Hiroyuki, Koyama Hideki, Koshida Nobuyoshi, Oxide‐free blue photoluminescence from photochemically etched porous silicon, 10.1063/1.116996
  27. Hilliard J., Andsager D., Abu Hassan L., Nayfeh Hasan M., Nayfeh M. H., Infrared spectroscopy and secondary ion mass spectrometry of luminescent, nonluminescent, and metal quenched porous silicon, 10.1063/1.357591
  28. Ban Takuya, Koizumi Tomohiro, Haba Shingo, Koshida Nobuyoshi, Suda Yoshiyuki, Effects of Anodization Current Density on Photoluminescence Properties of Porous Silicon, 10.1143/jjap.33.5603
  29. Xie Y. H., Wilson W. L., Ross F. M., Mucha J. A., Fitzgerald E. A., Macaulay J. M., Harris T. D., Luminescence and structural study of porous silicon films, 10.1063/1.351097
  30. Hory M.A., Hérino R., Ligeon M., Muller F., Gaspard F., Mihalcescu I., Vial J.C., Fourier transform IR monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact with organic solvents, 10.1016/0040-6090(94)05654-v
  31. Brenner, Electrodeposition of alloys (1963)
  32. Gao L. J., Anderson G. W., Norton P. R., Lu Z‐H., McCaffrey J. P., Graham M. J., Electrodeposition and characterization of magnetic Ni‐Fe thin films on InP(100) surfaces, 10.1063/1.359643
  33. Ben-Chorin M., Möller F., Koch F., Nonlinear electrical transport in porous silicon, 10.1103/physrevb.49.2981
  34. Pulsford N. J., Rikken G. L. J. A., Kessener Y. A. R. R., Lous E. J., Venhuizen A. H. J., Behavior of a rectifying junction at the interface between porous silicon and its substrate, 10.1063/1.355802
  35. Stievenard D., Deresmes D., Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds?, 10.1063/1.114942
  36. Bsiesy, J. Appl. Phys., 276, 175 (1996)
  37. Ray A. K., Mabrook M. F., Nabok A. V., Brown S., Transport mechanisms in porous silicon, 10.1063/1.368476
  38. Goryachev, Fiz. Tekh. Poluprovodn. (S. Peterburg), 34, 221 (2000)
  39. Jeske M., Schultze J.W., Münder H., Porous silicon: Base material for nanotechnologies, 10.1016/0013-4686(95)00046-h
  40. Montès L, Muller F, Gaspard F, Hérino R, Investigation on the electrochemical deposition of cadmium telluride in porous silicon, 10.1016/s0040-6090(96)09536-3