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Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

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Iniguez, B. Raskin, Jean-Pierre [UCL]

A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because the intrinsic device model is charge based, our RF SOI MOSFET model can be used in both small-and large-signal analyses. The present analytical model is used for successfully designing microwave oscillators at 5.8 and 12 GHz in deep-submicron SOI complementary metal oxide semiconductor technology. (C) 2002 Wiley Periodicals, Inc.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2002
Language Anglais
Journal information "International Journal of R F and Microwave Computer-Aided Engineering" - Vol. 12, no. 5, p. 428-438 (2002)
Peer reviewed yes
Publisher John Wiley & Sons Inc (Hoboken)
issn 1096-4290
e-issn 1099-047X
Publication status Publié
Affiliation UCL
Keywords deep submicron ; direct current to RF ; SOI MOSFET macromodel ; microwave circuits
Links
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Bibliographic reference Iniguez, B. ; Raskin, Jean-Pierre. Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits. In: International Journal of R F and Microwave Computer-Aided Engineering, Vol. 12, no. 5, p. 428-438 (2002)
Permanent URL http://hdl.handle.net/2078.1/41719