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25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

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Adriaensen, Stéphane [UCL] Flandre, Denis [UCL] Dessard, Vincent [UCL]

A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25degreesC up to 50 nA at 300degreesC) and good voltage stability (about 200 ppm/degreesC) over the whole temperature range.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2002
Language Anglais
Journal information "Electronics Letters" - Vol. 38, no. 19, p. 1103-1104 (2002)
Peer reviewed yes
Publisher Iee-inst Elec Eng (Hertford)
issn 0013-5194
e-issn 1350-911X
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords CMOS analogue integrated circuits ; low-power electronics ; circuit stability ; reference circuits ; silicon-on-insulator
Links
Bibliographic reference Adriaensen, Stéphane ; Flandre, Denis ; Dessard, Vincent. 25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process. In: Electronics Letters, Vol. 38, no. 19, p. 1103-1104 (2002)
Permanent URL http://hdl.handle.net/2078.1/41599