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LDMOS in SOI technology with very-thin silicon film

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Bawedin, Maryline [UCL] Flandre, Denis [UCL] Renaux, Christian [UCL]

In this paper, we extensively investigate, by two-dimensional simulations, the output characteristics accuracy and breakdown voltage performance for very-thin film (80 nm) SOI lateral double-diffused MOS (LDMOS) transistor as a function of the drift doping, drift length and field plate length. Trade-offs are discussed to optimize the off-state breakdown voltage versus the occurrence of kink effect and quasi-saturation in on-state. The conclusions are supported by experimental results. (C) 2004 Elsevier Ltd. All rights reserved.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2004
Language Anglais
Journal information "Solid-State Electronics" - Vol. 48, no. 12, p. 2263-2270 (2004)
Peer reviewed yes
Publisher Pergamon-elsevier Science Ltd (Oxford)
issn 0038-1101
e-issn 1879-2405
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords kink effect ; quasi-saturation ; lateral double-diffused MOS transistor ; very-thin silicon film ; silicon-on-insulator
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Bibliographic reference Bawedin, Maryline ; Flandre, Denis ; Renaux, Christian. LDMOS in SOI technology with very-thin silicon film. In: Solid-State Electronics, Vol. 48, no. 12, p. 2263-2270 (2004)
Permanent URL http://hdl.handle.net/2078.1/39919