User menu

Etch rate modification of SiO2 by ion damage

Bibliographic reference Charavel, Rémy ; Raskin, Jean-Pierre. Etch rate modification of SiO2 by ion damage. In: Electrochemical and Solid-State Letters, Vol. 9, no. 7, p. G245-G247 (2006)
Permanent URL
  1. Dominguez, Nucl. Instrum. Methods Phys. Res. B, 80-81, 1367 (1993)
  2. Hiraiwa A., Usui H., Yagi K., Novel characterization of implant damage in SiO2by nuclear‐deposited energy, 10.1063/1.101429
  3. Liu, Tech. Dig. - Int. Electron Devices Meet., 1996, 17
  4. http://
  5. J. F. Ziegler ,The Stopping and Range of Ions in Solids, Pergamon Press, Elmsford, NY (1985).
  6. Garrido B., Samitier J., Bota S., Domínguez C., Montserrat J., Morante J.R., Structural damage and defects created in SiO2 films by Ar ion implantation, 10.1016/0022-3093(95)00120-4
  7. Westonand, J. Vac. Sci. Technol., 1, 466 (1980)
  8. Holmes, Microelectron. Reliab., 5, 337 (1966)
  9. Keller Robert C., Helms C. R., Calculations of the barrier height and charge distribution of a metal–dielectric interface, 10.1116/1.578162