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Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon
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Document type | Article de périodique (Journal article) – Article de recherche |
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Access type | Accès libre |
Publication date | 2023 |
Language | Anglais |
Journal information | "Journal of Materials Science: Materials in Electronics" - Vol. 34, p. 373 (2023) |
Peer reviewed | yes |
Publisher | Springer New York LLC (New York) |
issn | 0957-4522 |
e-issn | 1573-482X |
Publication status | Publié |
Affiliations |
UCL
- SST/ICTM/ELEN - Pôle en ingénierie électrique UCL - SST/IMMC/IMAP - Materials and process engineering |
Links |
Bibliographic reference | Roisin, Nicolas ; Colla, Marie-Stéphane ; Raskin, Jean-Pierre ; Flandre, Denis. Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon. In: Journal of Materials Science: Materials in Electronics, Vol. 34, p. 373 (2023) |
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Permanent URL | http://hdl.handle.net/2078.1/272249 |