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Nox and buried PN junctions effect on RF performance of High-Resistivity Silicon substrates

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Moulin, Maxime [UCL] Rack, Martin [UCL] Fache, T. Nabet, Massinissa [UCL] Chalupa, Z. Raskin, Jean-Pierre [UCL]

In this paper, a substrate interface passivation solution based on high-resistivity (HR) substrates buried PN junctions with aggressive pitch is presented. C-V measurements, small- and large-signal simulations and measurements are reported. The HR+PN solution presented achieves effective resistivity values reaching 2 kΩ.cm with 0.1 dB/mm loss at 6 GHz. We report that this PN-passivated substrate provides good linearity and has no bias-dependency in its large-signal performance. This solution is suitable for local Parasitic Surface Conduction (PSC) interface passivation for next generations of wireless communications.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès libre
Publication date 2022
Language Anglais
Conference "The 22nd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF’22", Las Vegas, USA (du 16/01/2022 au 19/01/2022)
Peer reviewed yes
Host document "2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)" (ISBN : 978-1-6654-3469-0)
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
Bibliographic reference Moulin, Maxime ; Rack, Martin ; Fache, T. ; Nabet, Massinissa ; Chalupa, Z. ; et. al. Nox and buried PN junctions effect on RF performance of High-Resistivity Silicon substrates.The 22nd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF’22 (Las Vegas, USA, du 16/01/2022 au 19/01/2022). In: 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2022
Permanent URL http://hdl.handle.net/2078.1/269507