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Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stacks
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et al.
Nguyen, Viet-Hung
[UCL]
et al.
et al.
| Document type | Article de périodique (Journal article) – Article de recherche |
|---|---|
| Access type | Accès libre |
| Publication date | 2015 |
| Language | Anglais |
| Journal information | "Applied Physics Letters" - Vol. 106, no.2, p. 023508 (2015) |
| Peer reviewed | yes |
| Publisher | AIP Publishing |
| issn | 0003-6951 |
| e-issn | 1077-3118 |
| Publication status | Publié |
| Affiliation | CEA-Grenoble |
| Keywords | Physics and Astronomy (miscellaneous) |
| Links |
| Bibliographic reference | et al. ; Nguyen, Viet-Hung ; et al.. Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ-SiO2 gate stacks. In: Applied Physics Letters, Vol. 106, no.2, p. 023508 (2015) |
|---|---|
| Permanent URL | http://hdl.handle.net/2078/269123 |