Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors

Li, Guoli [Key Laboratory for Micro/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China] Fan, Zizheng [Key Laboratory for Micro/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China] André, Nicolas [UCL] Xu, Yongye [Key Laboratory for Micro/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China] Xia, Ying [Key Laboratory for Micro/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China] Iniguez, Benjamin [Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, 43007 Tarragona, Spain] Liao, Lei [Key Laboratory for Micro/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China] Flandre, Denis [UCL] et al.[show all]

In this work, we explore the output conductance function (G-function) to interpret the device characteristics of two-dimensional (2D) semiconductor transistors. Based on analysis of the device output conductance, the carrier mobility, and the channel as well as contact resistance are extracted. Thereafter the current voltage (IV) characteristics of black phosphorous (BP) and MoS2 transistors from room to low temperature are modeled and compared to experiments. The G-function model proves its reliability and accuracy in parameter extraction and IV modeling of 2D transistors, regardless of the n- or p- type, the short- or long-channel and the Schottky or Ohmic contact. Moreover, this works shows its high potential in the device modeling and further circuit design of the 2D transistors, requiring only few parameters and simulating precise IV characteristics.