High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

Wan, Da [School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan/China] Hao, Huang [School of Physics and Technology, Wuhan University, Wuhan/China] CHEN, Chen [School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan/China] Abliz, Ablat [School of Physics and Technology, Wuhan University, Wuhan/China] Ye, Cong [Faculty of Physics and Electronic Science, Hubei University, Wuhan/China] Liu, Xingqiang [Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha/China] Zou, Xuming [Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha/China] Li, Guoli [Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha/China] Flandre, Denis [UCL] Liao, Lei [Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha/China] et al.[show all]

Two-dimensional (2D)materials such as WSe2 are potential for advanced electronics because of their ultra-thin geometry and unique electrical properties. Herein, a simplified high-performance WSe2 complementary inverter based on a buried gate is demonstrated on an individual ambipolar WSe2 flake, in which both n- and p-type WSe2 transistors are achieved by local doping. The n-type doping is induced by the donors of benzyl viologen, showing an electron mobility of 28.1 cm2/V·s. In contrast, the p-type one is realized by Ozone exposure with a high mobility of 36.8 cm2/V·s. The buried gate enables enhanced electrostatic coupling,with a supply voltage (Vdd) of 5 V, and the complementary inverter demonstrates a voltage gain beyond 32, almost ideal noise margin approaching 0.5Vdd and low static power consumption. This work paves the way to achieve high-performance 2D material complementary inverters with simplified fabrication process.