Kazemi Esfeh, Babak
[UCL]
Makovejev S.
[Incize, Louvain-la-Neuve, Belgium]
Allibert F.
[Soitec, Bernin, France]
Raskin, Jean-Pierre
[UCL]
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on- Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate.


Bibliographic reference |
Kazemi Esfeh, Babak ; Makovejev S. ; Allibert F. ; Raskin, Jean-Pierre. A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates.IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (San Francisco, USA, du 16/10/2017 au 19/10/2017). In: Proceedings of the IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE2017, p. paper #11.2 |
Permanent URL |
http://hdl.handle.net/2078.1/219183 |