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Towards all-organic field-effect transistors by additive soft lithography.

Bibliographic reference Serban, Dana Alina ; Greco, Pierpaolo ; Melinte, Sorin ; Vlad, Alexandru ; Dutu, Constantin Augustin ; et. al. Towards all-organic field-effect transistors by additive soft lithography.. In: Small, Vol. 5, no. 10, p. 1117-1122 (2009)
Permanent URL http://hdl.handle.net/2078.1/21710
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  52. Note that the 200-µm channel length is set by the resolution of the photolithographic soft mask used here.
  53. Note that the transfer characteristic of Pt MIMIC samples is sometimes closer to the ideal square low Ids-Vbg2 dependence than the transfer characteristics of the Pt drop-cast device. This behavior is likely related to a high charge injection barrier existing in the later case, which could be caused by impurities (e.g, photoresist residues) appearing in the additional etching step underwent by the Pt drop-cast sample.
  54. When the solution is diluted to 0.02 wt%, regular P3HT stripes cannot be obtained anymore due to the lack of material in the transistor channel. This is the threshold concentration capable of ensuring continuous and (virtually) separated P3HT stripes in our experiments with submicrometric-relief stamps.
  55. We observe a pronounced field effect with clearly marked linear and saturation regions. The somewhat increased off-currents are due to unintentional doping, as the devices were not protected against moisture and oxygen contamination during processing and analysis. The modest on-to-off current ratios precluded the extraction of gm.