He, Jiawei
[School of Physics and Technology, Wuhan University, China]
Li, Guoli
[UCL]
Lv, Yawei
[School of Physics and Electronics, Hunan University, Changsha, China]
Wang, Chunlan
[School of Science, Xi’an Polytechnic University, China]
Liu, Chuansheng
[School of Physics and Technology, Wuhan University, China]
Li, Jinchai
[School of Physics and Technology, Wuhan University, China]
Flandre, Denis
[UCL]
Chen, Huipeng
[Institute of Optoelectronic Display, Fuzhou University, China]
Guo, Tailiang
[Institute of Optoelectronic Display, Fuzhou University, China]
Liao, Lei
[School of Physics and Technology, Wuhan University, China]
Here, the bilayer InGaZnO/In2O3 thin-film transistors (TFTs) are deposited by radio-frequency magnetron sputtering at room temperature. A high field-effect mobility (μFE) of 64.4 cm2 V−1 s−1 and a small subthreshold swing (SS) of 204 mV per decade are achieved in the bilayer-stack TFTs fabricated upon SiO2/Si substrate, with large improvement compared to the single layer InGaZnO and In2O3 TFTs. Implementing HfO2 and Si3N4 as high-k gate dielectrics, μFE and SS are correspondingly enhanced to be 67.5 and 79.1 cm2 V−1 s−1 , and 85 and 92 mV per decade in the bilayer TFTs. Defect self-compensation effect is also revealed, i.e., (In)+ + (O)− → In − O, while, respectively, considering the indium- and oxygen-related defects in InGaZnO and In2O3 and exploring the numerical simulations in SILVACO/Atlas (for electrical performance) and Quantum Espresso (for physical analysis). The In-O formation can result in a significant reduction in defect density (validated by the X-ray photoelectron spectra and low-frequency noise characterizations) and therefore improvement of μFE and SS in the bilayer-stack TFT. The important role of defect self-compensation mechanism while combining different individual channel layers in the oxide semiconducting TFTs is underlined and highly potential application in next-generation, fast-speed flexible displays is shown.
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