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Channel Width Influence on the Analog Performance of the Asymmetric Self-Cascode FD SOI nMOSFETs

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Assalti, R. [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] de Souza, Michelly [Centro Universitario FEI, Sao Bernardo do Campo/Brazil] Flandre, Denis [UCL]

In this paper, the analog performance of the Asymmetric Self-Cascode structure of Fully Depleted SOI nMOSFETs has been evaluated with regards to the variation of channel width, through three-dimensional numerical simulations. The largest gain has been obtained using the narrowest transistor near the source and the widest transistor near the drain.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès libre
Publication date 2017
Language Anglais
Conference "32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)", Fortaleza (Brazil) (du 28/08/2017 au 01/09/2017)
Peer reviewed yes
Host document "Proceedings of the 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017)"
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Asymmetric self-cascode; Channel width; FD SOI nMOSFETs; Analog performance; Numerical simulations
Links
Bibliographic reference Assalti, R. ; de Souza, Michelly ; Flandre, Denis. Channel Width Influence on the Analog Performance of the Asymmetric Self-Cascode FD SOI nMOSFETs.32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017) (Fortaleza (Brazil), du 28/08/2017 au 01/09/2017). In: Proceedings of the 32nd Symposium on Microelectronics Technology and Devices (SBMicro 2017), 2017
Permanent URL http://hdl.handle.net/2078.1/192613