User menu

Single Event Effects and Total Ionising Dose in 600V Si-on-SiC LDMOS Transistors for Rad-Hard Space Applications

Bibliographic reference Ben Ali, Khaled ; Gammon, P.M. ; Chan, C.W. ; Li, F. ; Pathirana, V. ; et. al. Single Event Effects and Total Ionising Dose in 600V Si-on-SiC LDMOS Transistors for Rad-Hard Space Applications. 2017 47th European Solid-State Device Research Conference (ESSDERC) (Leuven (Belgium), 16/10/2017). In: Proceedings of the 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p. 6
Permanent URL http://hdl.handle.net/2078.1/191145