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Influence of Free Radical Surface Activation on Si/SiC Heterogeneous Integration by Direct Wafer Bonding

Bibliographic reference Torchia, P. ; Pampili, P. ; O'Connell, J. ; O'Brien, J. ; White, M. ; et. al. Influence of Free Radical Surface Activation on Si/SiC Heterogeneous Integration by Direct Wafer Bonding.2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2017) (Athens (Greece), du 03/04/2017 au 05/04/2017). In: Proceedings of the 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2017, p. 2
Permanent URL http://hdl.handle.net/2078.1/191138