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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

Bibliographic reference Gammon, P.M. ; Li, F. ; Chan, C.W. ; Sanchez, A. ; Hindmarsh, S. ; et. al. The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices. In: Materials Science Forum, Vol. 897, p. 747-750 (12/01/2017)
Permanent URL http://hdl.handle.net/2078.1/185136
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