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An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models

Bibliographic reference Pereira, A.S.N. ; de Streel, Guerric ; Planes, N. ; Haond, M. ; Giacomini, R. ; et. al. An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models. In: Solid-State Electronics, Vol. 128, p. 67-71 (15/10/2016)
Permanent URL http://hdl.handle.net/2078.1/181095