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Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films

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Turner, S. [EMAT, University of Antwerp] Idrissi, Hosni [UCL] Sartori, A.F. [Universität Augsburg, Germany] Korneychuck, S. [EMAT, University of Antwerp] Lu, Y.-G. [EMAT, University of Antwerp] Van Tendeloo, G. [EMAT, University of Antwerp]

A thin film of heavily B-doped diamond has been grown epitaxially by microwave plasma chemical vapor deposition on an undoped diamond layer, on top of a Ir/YSZ/Si(001) substrate stack, to study the boron segregation and boron environment at the dislocations present in the film. The density and nature of the dislocations were investigated by conventional and weak-beam dark-field transmission electron microscopy techniques, revealing the presence of two types of dislocations: edge and mixed-type 45° dislocations. The presence and distribution of B in the sample was studied using annular dark-field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these techniques, a segregation of B at the dislocations in the film is evidenced, which is shown to be intermittent along the dislocation. A single edge-type dislocation was selected to study the distribution of the boron surrounding the dislocation core. By imaging this defect at atomic resolution, the boron is revealed to segregate towards the tensile strain field surrounding the edge-type dislocations. An investigation of the fine structure of the B-K edge at the dislocation core shows that the boron is partially substitutionally incorporated into the diamond lattice and partially present in a lower coordination (sp2-like hybridization).

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès libre
Publication date 2016
Language Anglais
Journal information "Nanoscale" - Vol. 8, p. 2212-2218 (2016)
Peer reviewed yes
Publisher National Center for Nanoscience and Technology
issn 2040-3364
e-issn 2040-3372
Publication status Publié
Affiliations University or Antwerp - EMAT
UCL - SST/IMMC/IMAP - Materials and process engineering
Universität Augsburg, Germany - Institut für Physik
University of North Carolina at Charlotte, USA - Department of Mechanical Engineering and Engineering Science
Links
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Bibliographic reference Turner, S. ; Idrissi, Hosni ; Sartori, A.F. ; Korneychuck, S. ; Lu, Y.-G. ; et. al. Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films. In: Nanoscale, Vol. 8, p. 2212-2218 (2016)
Permanent URL http://hdl.handle.net/2078.1/174895