Cai, Ronggang
[UCL]
Jonas, Alain M.
[UCL]
We study the local ferroelectric polarization and depolarization of poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)) in p-type ferroelectric field-effect transistors (FeFETs). Piezoresponse force microscopy (PFM) is used to obtain local maps of the polarization on model metal-semiconductorferroelectric stacks, and on FeFETs stripped from their top-gate electrode; transfer curves are measured on complete FeFETs. The influence of the semiconductor layer thickness and of the polarity and amplitude of the poling voltage are investigated. In accumulation, the stable “on” state consists of a uniform upward-polarized ferroelectric layer, with compensation holes accumulating at the ferroelectric/semiconducting interface. In depletion, the stable “off” state consists of a depolarized region in the center of the transistor channel, surrounded by partially downward-polarized regions over the source and drain electrodes and neighboring regions. The partial depolarization of these regions is due to the incomplete screening of polarization charges by the charges of the remote electrodes. Therefore, thinner semiconducting layers provide higher downward polarizations, which result in a more depleted transistor channel and a higher charge injection barrier between the electrodes and the semiconductor, leading to lower threshold voltages and higher on/off current values at zero gate bias. Clues for optimization of the devices are finally provided.
- Naber Ronald C. G., Tanase Cristina, Blom Paul W. M., Gelinck Gerwin H., Marsman Albert W., Touwslager Fred J., Setayesh Sepas, de Leeuw Dago M., High-performance solution-processed polymer ferroelectric field-effect transistors, 10.1038/nmat1329
- Gelinck G. H., Marsman A. W., Touwslager F. J., Setayesh S., de Leeuw D. M., Naber R. C. G., Blom P. W. M., All-polymer ferroelectric transistors, 10.1063/1.2035324
- Naber R. C. G., de Boer B., Blom P. W. M., de Leeuw D. M., Low-voltage polymer field-effect transistors for nonvolatile memories, 10.1063/1.2132062
- Naber R.C.G., Mulder M., de Boer B., Blom P.W.M., de Leeuw D.M., High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric, 10.1016/j.orgel.2005.11.007
- Naber R. C. G., Massolt J., Spijkman M., Asadi K., Blom P. W. M., de Leeuw D. M., Origin of the drain current bistability in polymer ferroelectric field-effect transistors, 10.1063/1.2713856
- Nguyen C.A., Mhaisalkar S.G., Ma J., Lee P.S., Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric, 10.1016/j.orgel.2008.08.012
- Lazareva I., Koval Y., Müller P., Müller K., Henkel K., Schmeisser D., Interface screening and imprint in poly(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors, 10.1063/1.3088887
- Lee Kwang H., Lee Gyubaek, Lee Kimoon, Oh Min Suk, Im Seongil, Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer, 10.1063/1.3089379
- Das Saptarshi, Appenzeller Joerg, FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell, 10.1021/nl2023993
- Kam Benjamin, Li Xiaoran, Cristoferi Claudio, Smits Edsger C. P., Mityashin Alexander, Schols Sarah, Genoe Jan, Gelinck Gerwin, Heremans Paul, Origin of multiple memory states in organic ferroelectric field-effect transistors, 10.1063/1.4737176
- van Breemen Albert, Kam Benjamin, Cobb Brian, Rodriguez Francisco Gonzales, van Heck Gert, Myny Kris, Marrani Alessio, Vinciguerra Vincenzo, Gelinck Gerwin, Ferroelectric transistor memory arrays on flexible foils, 10.1016/j.orgel.2013.04.025
- Furukawa, T., Nakajima, T. & Takahashi, Y. Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films. IEEE Trans. Dielectr. Electr. Insul. 13, 1120–1131 (2006).
- Furukawa T., Kanai S., Okada A., Takahashi Y., Yamamoto R., Ferroelectric switching dynamics in VDF-TrFE copolymer thin films spin coated on Si substrate, 10.1063/1.3055411
- Heremans Paul, Gelinck Gerwin H., Müller Robert, Baeg Kang-Jun, Kim Dong-Yu, Noh Yong-Young, Polymer and Organic Nonvolatile Memory Devices†, 10.1021/cm102006v
- Gelinck G. H., van Breemen A. J. J. M., Cobb B., Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor, 10.1063/1.4913920
- Brondijk Jakob J., Asadi Kamal, Blom Paul W. M., de Leeuw Dago M., Physics of organic ferroelectric field-effect transistors, 10.1002/polb.22363
- Chandra Premi, Littlewood Peter B., A Landau Primer for Ferroelectrics, Topics in Applied Physics ISBN:9783540345909 p.69-116, 10.1007/978-3-540-34591-6_3
- Fu Zongyuan, Zhang Jianchi, Weng Junhui, Chen Weibo, Jiang Yulong, Zhu Guodong, Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations, 10.1063/1.4931998
- Cai Ronggang, Kassa Hailu G., Marrani Alessio, van Breemen Albert J. J. M., Gelinck Gerwin H., Nysten Bernard, Hu Zhijun, Jonas Alain M., An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric, 10.1063/1.4896292
- Yagi Toshiharu, Tatemoto Masayoshi, Sako Jun-ichi, Transition Behavior and Dielectric Properties in Trifluoroethylene and Vinylidene Fluoride Copolymers, 10.1295/polymj.12.209
- Katsouras Ilias, Zhao Dong, Spijkman Mark-Jan, Li Mengyuan, Blom Paul W. M., Leeuw Dago M. de, Asadi Kamal, Controlling the on/off current ratio of ferroelectric field-effect transistors, 10.1038/srep12094
- Asadi Kamal, de Boer Tom G., Blom Paul W. M., de Leeuw Dago M., Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends, 10.1002/adfm.200900383
- Asadi Kamal, de Leeuw Dago M., de Boer Bert, Blom Paul W. M., Organic non-volatile memories from ferroelectric phase-separated blends, 10.1038/nmat2207
- Ruiz R., Papadimitratos A., Mayer A. C., Malliaras G. G., Thickness Dependence of Mobility in Pentacene Thin-Film Transistors, 10.1002/adma.200402077
- Shi Jun, Jiang De-Tong, Dutcher John R., Qin Xiao-Rong, Thickness-dependent mobility in tetracene thin-film field-effect-transistors, 10.1116/1.4931034
Bibliographic reference |
Cai, Ronggang ; Jonas, Alain M.. Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors. In: Scientific Reports, Vol. 6, p. 22116 (2016) |
Permanent URL |
http://hdl.handle.net/2078.1/172328 |