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Roughness analysis in strained silicon-on-insulator wires and films

Bibliographic reference Ureña, Ferran ; Raskin, Jean-Pierre ; Minamisawa, Renato A. ; Escobedo-Cousin, Enrique ; Olsen, Sarah H.. Roughness analysis in strained silicon-on-insulator wires and films. In: Journal of Applied Physics, Vol. 116, no. 12 (2014)
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  1. Song Yi, Zhou Huajie, Xu Qiuxia, Luo Jun, Yin Haizhou, Yan Jiang, Zhong Huicai, Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status, 10.1007/s11664-011-1623-z
  2. Lee Minjoo L., Fitzgerald Eugene A., Bulsara Mayank T., Currie Matthew T., Lochtefeld Anthony, Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors, 10.1063/1.1819976
  3. Chu Min, Sun Yongke, Aghoram Umamaheswari, Thompson Scott E., Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs, 10.1146/annurev-matsci-082908-145312
  4. Yi Zhao, Takenaka M., Takagi S., On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs, 10.1109/led.2009.2026661
  5. Zhi-Yuan Cheng, Currie M.T., Leitz C.W., Taraschi G., Fitzgerald E.A., Hoyt J.L., Antoniadas D.A., Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates, 10.1109/55.930678
  6. Rim K., Hoyt J.L., Gibbons J.F., Fabrication and analysis of deep submicron strained-Si n-MOSFET's, 10.1109/16.848284
  7. Fischetti M. V., Gámiz F., Hänsch W., On the enhanced electron mobility in strained-silicon inversion layers, 10.1063/1.1521796
  8. Bonno Olivier, Barraud Sylvain, Mariolle Denis, Andrieu François, Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations, 10.1063/1.2896589
  9. Escobedo-Cousin E., Olsen S. H., Pardoen T., Bhaskar U., Raskin J.-P., Experimental observations of surface roughness in uniaxially loaded strained Si microelectromechanical systems-based structures, 10.1063/1.3669413
  10. Pirovano A., Lacaita A.L., Ghidini G., Tallarida G., On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs, 10.1109/55.817444
  11. Goodnick S. M., Ferry D. K., Wilmsen C. W., Liliental Z., Fathy D., Krivanek O. L., Surface roughness at the Si(100)-SiO2interface, 10.1103/physrevb.32.8171
  12. Mazzoni G., Lacaita A.L., Perron L.M., Pirovano A., On surface roughness-limited mobility in highly doped n-MOSFET's, 10.1109/16.772486
  13. Zhao Yi, Matsumoto Hirosaki, Sato Takeshi, Koyama Susumu, Takenaka Mitsuru, Takagi Shinichi, A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs, 10.1109/ted.2010.2052394
  14. Ishihara Takamitsu, Matsuzawa Kazuya, Takayanagi Mariko, Takagi Shin-ichi, Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness, 10.1143/jjap.41.2353
  15. Pirovano A., Lacaita A.L., Zandler G., Oberhuber R., Explaining the dependences of electron and hole mobilities in Si MOSFET's inversion layer, 10.1109/iedm.1999.824208
  16. Yoshinobu T., Scaling of Si/SiO2 interface roughness, 10.1116/1.587869
  17. Mandelbrot B. B., The Fractal Geometry of Nature: Updated and Augment (1982)
  18. Pelliccione M., Evolution of Thin-film Morphology: Modeling and Simulations (2007)
  19. Zhao Y. P., Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications (2000)
  20. Sinha S. K., Sirota E. B., Garoff S., Stanley H. B., X-ray and neutron scattering from rough surfaces, 10.1103/physrevb.38.2297
  21. Stommer R., Adv. X-Ray Anal., 41, 101 (1999)
  22. Vicsek Tamás, Cserző Miklós, Horváth Viktor K., Self-affine growth of bacterial colonies, 10.1016/0378-4371(90)90116-a
  23. Arnault J.C., Knoll A., Smigiel E., Cornet A., Roughness fractal approach of oxidised surfaces by AFM and diffuse X-ray reflectometry measurements, 10.1016/s0169-4332(00)00550-x
  24. Bhaskar Umesh, Passi Vikram, Houri Samer, Escobedo-Cousin Enrique, Olsen Sarah H., Pardoen Thomas, Raskin Jean-Pierre, On-chip tensile testing of nanoscale silicon free-standing beams, 10.1557/jmr.2011.340
  25. Passi Vikram, Bhaskar Umesh, Pardoen Thomas, Sodervall Ulf, Nilsson Bengt, Petersson Göran, Hagberg Mats, Raskin Jean-Pierre, High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires, 10.1109/jmems.2012.2190711
  26. Kumar Bhaskar Umesh, Pardoen Thomas, Passi Vikram, Raskin Jean-Pierre, Piezoresistance of nano-scale silicon up to 2 GPa in tension, 10.1063/1.4788919
  27. Liu X.H, Chen J, Chen M, Wang X, Investigation of interface in silicon-on-insulator by fractal analysis, 10.1016/s0169-4332(01)00827-3
  28. Vicsek Tamás, Fractal Growth Phenomena, ISBN:9789810206680, 10.1142/1407
  29. da Silva J.B., de Vasconcelos E.A., dos Santos B.E.C.A., Freire J.A.K., Freire V.N., Farias G.A., da Silva E.F., Statistical analysis of topographic images of nanoporous silicon and model surfaces, 10.1016/j.mejo.2005.04.007
  30. Liu Z.-J., Jiang N., Shen Y. G., Mai Y.-W., Atomic force microscopy study of surface roughening of sputter-deposited TiN thin films, 10.1063/1.1504497
  31. Gravier S., Coulombier M., Safi A., Andre N., Boe A., Raskin J.-P., Pardoen T., New On-Chip Nanomechanical Testing Laboratory - Applications to Aluminum and Polysilicon Thin Films, 10.1109/jmems.2009.2020380
  32. Bunshah R. F., Handbook of Deposition Technologies for Films and Coatings—Science, Technology and Applications (1994)
  33. Ureña Ferran, Olsen Sarah H., Šiller Lidija, Bhaskar Umesh, Pardoen Thomas, Raskin Jean-Pierre, Strain in silicon nanowire beams, 10.1063/1.4765025
  34. Ureña Ferran, Olsen Sarah H., Raskin Jean-Pierre, Raman measurements of uniaxial strain in silicon nanostructures, 10.1063/1.4824291
  35. Ghyselen B., Hartmann J.-M., Ernst T., Aulnette C., Osternaud B., Bogumilowicz Y., Abbadie A., Besson P., Rayssac O., Tiberj A., Daval N., Cayrefourq I., Fournel F., Moriceau H., Di Nardo C., Andrieu F., Paillard V., Cabié M., Vincent L., Snoeck E., Cristiano F., Rocher A., Ponchet A., Claverie A., Boucaud P., Semeria M.-N., Bensahel D., Kernevez N., Mazure C., Engineering strained silicon on insulator wafers with the Smart CutTM technology, 10.1016/j.sse.2004.01.011
  36. Lai L., Irene E. A., Limiting Si/SiO2 interface roughness resulting from thermal oxidation, 10.1063/1.370954
  37. Schwarzenbach W., Proceedings of the IEEE International Conference on Integrated Circuit Design and Technology (2012)
  38. Xie Y. H., Gilmer G. H., Roland C., Silverman P. J., Buratto S. K., Cheng J. Y., Fitzgerald E. A., Kortan A. R., Schuppler S., Marcus M. A., Citrin P. H., Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain, 10.1103/physrevlett.73.3006
  39. De Michielis Marco, Conzatti Francesco, Esseni David, Selmi Luca, On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors, 10.1109/ted.2011.2158606