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Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Bibliographic reference Smets, Quentin ; Heyns, Marc M. ; Raskin, Jean-Pierre ; Thean, Aaron ; Collaert, Nadine ; et. al. Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification. In: Applied Physics Letters, Vol. 105, no. 20 (2014)
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  1. Ionescu Adrian M., Riel Heike, Tunnel field-effect transistors as energy-efficient electronic switches, 10.1038/nature10679
  2. Lu Hao, Seabaugh Alan, Tunnel Field-Effect Transistors: State-of-the-Art, 10.1109/jeds.2014.2326622
  3. Mohata D. K., Pawlik D., Liu L., Mookerjea S., Saripalli V., Rommel S., Datta S., Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications, 10.1109/drc.2010.5551856
  4. Smets Quentin, Verreck Devin, Verhulst Anne S., Rooyackers Rita, Merckling Clément, Van De Put Maarten, Simoen Eddy, Vandervorst Wilfried, Collaert Nadine, Thean Voon Y., Sorée Bart, Groeseneken Guido, Heyns Marc M., InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models, 10.1063/1.4875535
  5. Vandenberghe William G., Sorée Bart, Magnus Wim, Groeseneken Guido, Fischetti Massimo V., Impact of field-induced quantum confinement in tunneling field-effect devices, 10.1063/1.3573812
  6. Li Rui, Lu Yeqing, Chae Soo Doo, Zhou Guangle, Liu Qingmin, Chen Chen, Shahriar Rahman M., Vasen Tim, Zhang Qin, Fay Patrick, Kosel Tom, Wistey Mark, Xing Huili Grace, Koswatta Siyuranga, Seabaugh Alan, InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field, 10.1002/pssc.201100241
  7. Dey Anil W., Svensson Johannes, Ek Martin, Lind Erik, Thelander Claes, Wernersson Lars-Erik, Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors, 10.1021/nl4029494
  8. Verreck Devin, Verhulst Anne S., Kao Kuo-Hsing, Vandenberghe William G., De Meyer Kristin, Groeseneken Guido, Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors, 10.1109/ted.2013.2260237
  9. Goetzberger A., Nicollian E. H., MOS Avalanche and Tunneling Effects in Silicon Surfaces, 10.1063/1.1709189
  10. Smets Q., Verhulst A. S., Lin D. H.-C., Verreck D., Merckling C., Kazzi S. El, Martens K., Raskin J-P., Thean V.-Y., Heyns M. M., Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization, 10.1109/drc.2014.6872298
  11. Chu L. K., Merckling C., Alian A., Dekoster J., Kwo J., Hong M., Caymax M., Heyns M., Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics, 10.1063/1.3617436
  12. Kar S., Extraction of the capacitance of ultrathin high-K gate dielectrics, 10.1109/ted.2003.817271
  13. Zielinski E., Schweizer H., Streubel K., Eisele H., Weimann G., Excitonic transitions and exciton damping processes in InGaAs/InP, 10.1063/1.336358
  14. Jain S.C., Roulston D.J., A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers, 10.1016/0038-1101(91)90149-s
  15. Cho Woo-Suhl, Luisier Mathieu, Mohata Dheeraj, Datta Suman, Pawlik David, Rommel Sean L., Klimeck Gerhard, Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing, 10.1063/1.3682506
  16. Chindalore G., Hareland S.A., Jallepalli S.A., Tasch A.F., Maziar C.M., Chia V.K.F., Smith S., Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers, 10.1109/55.568765
  17. Martens Koen, Chui Chi On, Brammertz Guy, De Jaeger Brice, Kuzum Duygu, Meuris Marc, Heyns Marc, Krishnamohan Tejas, Saraswat Krishna, Maes Herman E., Groeseneken Guido, On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates, 10.1109/ted.2007.912365